This inventor holds 3 USPTO granted patents and 2 published patent applications. Top assignees: National Taiwan University, Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2021-2025.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
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Years Active: 2021-2025
Title: Kuan-Wun Lin: Innovator in Memory Device Technology
Introduction
Kuan-Wun Lin is a prominent inventor based in Changhua County, Taiwan. He has made significant contributions to the field of memory device technology, holding a total of three patents. His innovative designs have advanced the capabilities of semiconductor memory devices.
Latest Patents
Kuan-Wun Lin's latest patents include a memory device that features a semiconductor substrate and a memory cell located in a designated memory region. This memory cell consists of a memory portion, a tunneling layer, a storage layer, a first electrode, and a second electrode. The tunneling layer is positioned over the memory portion, while the storage layer is in contact with the tunneling layer. The first electrode is situated above the storage layer, and the second electrode is spaced apart from the storage layer but in contact with the tunneling layer. Another patent describes a memory device that includes a memory cell, a writing transistor, and a reading transistor. The memory cell comprises a semiconductor substrate, a tunneling layer, a storage layer, and three electrodes. The writing transistor is electrically connected to the first electrode, while the reading transistor connects to the second electrode.
Career Highlights
Kuan-Wun Lin has worked with notable organizations such as Taiwan Semiconductor Manufacturing Company Ltd. and National Taiwan University. His experience in these institutions has allowed him to refine his expertise in semiconductor technology and memory devices.
Collaborations
Throughout his career, Kuan-Wun Lin has collaborated with esteemed colleagues, including Jenn-Gwo Hwu and Bo-Jyun Chen. These partnerships have contributed to the advancement of his research and innovations in memory technology.
Conclusion
Kuan-Wun Lin is a distinguished inventor whose work in memory device technology has made a lasting impact. His patents reflect his commitment to innovation and excellence in the field of semiconductor technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile