The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2021
Filed:
Dec. 26, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Abstract
A memory device includes a memory cell, a writing transistor, and a reading transistor. The memory cell includes a semiconductor substrate, a tunneling layer, a storage layer, a first electrode, a second electrode, and a third electrode. The tunneling layer is over the semiconductor substrate. The storage layer is on the tunneling layer. The first electrode is on the storage layer. The second electrode is on the tunneling layer. The storage layer has a sidewall facing the second electrode. The third electrode is spaced apart from the second electrode. The writing transistor is electrically connected to the first electrode of the memory cell. The reading transistor is electrically connected to the second electrode of the memory cell.