This inventor holds 1 USPTO granted patent. Top assignee: United Microelectronics Corp.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Kuan-Hsiang Chen and Magnetic Memory Technology.
Introduction
Kuan-Hsiang Chen is an inventor associated with Nantou County, Taiwan, and United Microelectronics Corporation. His patent work concerns magnetic memory technology and the structure of a magnetic tunneling junction device.
Latest Patents
Chen is named on 1 patent, titled “Magnetic Memory Device.” The invention describes a magnetic tunneling junction (MTJ) stack comprising a reference layer, a tunneling barrier layer, and a free layer. Above the stack, a capping layer includes a metal underlayer in direct contact with the free layer, an oxide capping layer, and a metal protection layer. This layered design addresses the construction and protection of the MTJ stack.
Career Highlights
Chen’s listed patent reflects work in magnetic memory devices, a technology area relevant to the design of electronic memory components. He is associated with United Microelectronics Corporation.
Collaborations
Chen’s listed coworker is Yi-Ching Wang. Their shared association connects their work to the development of magnetic memory technology.
Conclusion
Kuan-Hsiang Chen’s patent documents a layered magnetic memory device design, highlighting his contribution to innovation in MTJ-based memory technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile