Company Filing History:
Years Active: 2007
Title: Kraisom Throngnumchai: Innovator in Silicon Carbide Diodes
Introduction
Kraisom Throngnumchai is a notable inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of high reverse voltage silicon carbide diodes. His innovative work has implications for various applications in electronics and power systems.
Latest Patents
Kraisom holds a patent for a "High reverse voltage silicon carbide diode and method of manufacturing the same high reverse voltage silicon carbide diode." This invention features a hetero junction composed of a silicon carbide base layer and a polycrystalline silicon layer, which have different band gaps. The design includes a low concentration N-type polycrystalline silicon layer deposited on one side of the silicon carbide base layer, with a metal electrode formed on the opposite side. This configuration enhances the diode's performance in high voltage applications.
Career Highlights
Kraisom Throngnumchai is currently employed at Nissan Motor Company Limited, where he applies his expertise in semiconductor technology. His work at Nissan has allowed him to contribute to advancements in automotive electronics, particularly in the area of power management systems.
Collaborations
Kraisom has collaborated with notable colleagues such as Yoshio Shimoida and Saichirou Kaneko. These partnerships have fostered innovation and have been instrumental in the development of new technologies within the semiconductor field.
Conclusion
Kraisom Throngnumchai is a distinguished inventor whose work in silicon carbide diodes represents a significant advancement in semiconductor technology. His contributions continue to influence the electronics industry, particularly in high voltage applications.