Nissan Motor Company Limited

Kraisom Throngnumchai

Tetsuya Hayashi

Hideaki Tanaka

Yoshio Shimoida

Masakatsu Hoshi

Teruyoshi Mihara

Saichirou Kaneko

A high reverse voltage diode includes a hetero junction made up from a silicon carbide base layer, which constitutes a first semiconductor base layer, and a polycrystalline silicon layer, which constitutes a second semiconductor layer, and whose band gap is different from that of the silicon carbide base layer. A low concentration N type polycrystalline silicon layer is deposited on a first main surface side of the silicon carbide base layer, and a metal electrode is formed on a second main surface side of the silicon carbide base layer which is opposite to the first main surface side thereof.

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Yokohama, Japan

Kraisom Throngnumchai