The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2007
Filed:
Feb. 19, 2003
Yoshio Shimoida, Yokosuka, JP;
Saichirou Kaneko, Yokosuka, JP;
Hideaki Tanaka, Yokosuka, JP;
Masakatsu Hoshi, Yokohama, JP;
Kraisom Throngnumchai, Yokohama, JP;
Teruyoshi Mihara, Yokosuka, JP;
Tetsuya Hayashi, Yokosuka, JP;
Yoshio Shimoida, Yokosuka, JP;
Saichirou Kaneko, Yokosuka, JP;
Hideaki Tanaka, Yokosuka, JP;
Masakatsu Hoshi, Yokohama, JP;
Kraisom Throngnumchai, Yokohama, JP;
Teruyoshi Mihara, Yokosuka, JP;
Tetsuya Hayashi, Yokosuka, JP;
Nissan Motor Co., Ltd., Kanagawa-Ken, JP;
Abstract
A high reverse voltage diode includes a hetero junction made up from a silicon carbide base layer, which constitutes a first semiconductor base layer, and a polycrystalline silicon layer, which constitutes a second semiconductor layer, and whose band gap is different from that of the silicon carbide base layer. A low concentration N type polycrystalline silicon layer is deposited on a first main surface side of the silicon carbide base layer, and a metal electrode is formed on a second main surface side of the silicon carbide base layer which is opposite to the first main surface side thereof.