Koujl Sueoka

Title: Innovations of Koujl Sueoka in Silicon Crystal Manufacturing

Introduction

Koujl Sueoka is a notable inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor manufacturing, particularly in the production of high resistivity silicon single crystals. His innovative approaches have paved the way for advancements in various technological applications.

Latest Patents

Koujl Sueoka holds a patent for a manufacturing method of high resistivity silicon single crystal. This method aims to suppress fluctuations in resistivity around a target value, enabling the stable production of high resistivity silicon single crystals with consistent resistivity values. The process involves melting a silicon raw material to create crystals with resistivity ranging from 100 to 2000 Ω cm using the Czochralski (CZ) method. The patent also details the selection of poly-silicon produced via the Siemens method, ensuring controlled impurity concentrations to achieve the desired resistivity.

Career Highlights

Koujl Sueoka is currently employed at Sumitomo Mitsubishi Silicon Corporation, where he continues to innovate in the field of silicon manufacturing. His work has been instrumental in enhancing the quality and reliability of silicon crystals used in various electronic devices.

Collaborations

Koujl Sueoka has collaborated with esteemed colleagues such as Nobumitsu Takase and Hideshi Nishikawa. Their combined expertise has contributed to the advancement of semiconductor technologies and the successful implementation of innovative manufacturing methods.

Conclusion

Koujl Sueoka's contributions to the field of silicon crystal manufacturing highlight his role as a key innovator in the industry. His patented methods and collaborative efforts continue to influence advancements in semiconductor technology.