Kawasaki, Japan

Kouji Tani

This inventor holds 1 USPTO granted patent. Top assignee: Fujitsu Corporation. Active years: 2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kouji Tani. Retrieved from https://idiyas.com/inventor/kouji-tani

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 16(Granted Patents)


Company Filing History:


Years Active: 2002

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1 patent (USPTO):Explore Patents

Title: Kouji Tani: Innovator in Semiconductor Technology

Introduction

Kouji Tani is a prominent inventor based in Kawasaki, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that incorporates advanced materials and fabrication processes.

Latest Patents

Kouji Tani holds 1 patent for his invention titled "Semiconductor device having a ferroelectric film and a fabrication process thereof." This patent describes a semiconductor device that includes a ferroelectric capacitor and a protective film of Al2O3. The protective film is designed to block the penetration of H2 atmosphere into the ferroelectric capacitor. Notably, the Al2O3 protective film has a density of about 3.0 g/cm³ or more when the thickness exceeds 20 nm, and a density of about 3.1 g/cm³ or more when the thickness is 20 nm or less.

Career Highlights

Kouji Tani is currently employed at Fujitsu Corporation, where he continues to push the boundaries of semiconductor technology. His work at Fujitsu has allowed him to collaborate with other talented professionals in the field, enhancing the company's innovative capabilities.

Collaborations

One of Kouji Tani's notable collaborators is Kazuaki Takai. Together, they have worked on various projects that aim to advance semiconductor technology and improve device performance.

Conclusion

Kouji Tani's contributions to semiconductor technology exemplify the spirit of innovation. His patent on a semiconductor device with a ferroelectric film showcases his expertise and commitment to advancing the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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