Kouji Nomura

Title: Innovator Spotlight: Kouji Nomura

Introduction

Kouji Nomura is a notable inventor based in Hyogo, Japan, recognized for his contributions to semiconductor technology. With a focus on innovative manufacturing methods, Nomura has secured two significant patents that address critical challenges in the field of CMOS semiconductor devices.

Latest Patents

Nomura's latest patents revolve around the manufacturing method of CMOS type semiconductor devices. The primary invention is designed to suppress boron penetration from the gate electrodes of pMOS transistors to the semiconductor substrate. Notably, this method helps improve the Negative Bias Temperature Instability (NBTI) lifetime of pMOS transistors while maintaining the performance of nMOS transistors. The process involves introducing halogen to the semiconductor substrate in areas designated for pMOS transistor formation, followed by the formation of a gate insulating film and the introduction of nitrogen to that film.

Career Highlights

Throughout his career, Kouji Nomura has been associated with leading companies in the semiconductor industry, including Renesas Electronics Corporation and Renesas Technology Corporation. His work in these organizations has positioned him as a pivotal figure in the advancement of semiconductor manufacturing techniques.

Collaborations

Nomura has had the opportunity to collaborate with skilled professionals in his field, including Shimpei Tsujikawa and Yasuhiko Akamatsu. These collaborations have contributed to the development of innovative solutions that have significantly advanced semiconductor technology.

Conclusion

Kouji Nomura's contributions through his patents and collaborations highlight his influence in the semiconductor industry. His innovative methods for improving CMOS type semiconductor devices not only address current technical challenges but also pave the way for future advancements in semiconductor manufacturing.