Mitaka, Japan

Kouichirou Yamada


Average Co-Inventor Count = 12.0

ph-index = 3

Forward Citations = 39(Granted Patents)


Company Filing History:


Years Active: 1991-1996

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3 patents (USPTO):Explore Patents

Title: Kouichirou Yamada: Innovator in Semiconductor Technology

Introduction

Kouichirou Yamada is a prominent inventor based in Mitaka, Japan. He has made significant contributions to the field of semiconductor technology, holding three patents that showcase his innovative approach to integrated circuit devices.

Latest Patents

Yamada's latest patents include a method of manufacturing a semiconductor integrated circuit device. This invention discloses a bipolar-CMOS LSI manufactured by a simplified process, achieving a higher density of integration and enhanced operating speed. The design features a base lead-out electrode of a bipolar transistor and respective gate electrodes of a p-channel MISFET and an n-channel MISFET of CMOS transistors, all made from an identical conductor film. Notably, the conductor film of the gate electrode of the p-channel MISFET is of p-type, while that of the n-channel MISFET is of n-type. This innovative approach is also reflected in another patent for a similar method of manufacturing semiconductor integrated circuit devices.

Career Highlights

Kouichirou Yamada is currently employed at Hitachi, Ltd., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the efficiency and performance of integrated circuits.

Collaborations

Yamada has collaborated with notable colleagues, including Takahide Ikeda and Osamu Saito, contributing to a dynamic research environment that fosters innovation.

Conclusion

Kouichirou Yamada's contributions to semiconductor technology through his patents and work at Hitachi, Ltd. highlight his role as a key innovator in the field. His advancements in manufacturing methods for integrated circuits are paving the way for future developments in technology.

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