The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 1996
Filed:
Jul. 08, 1994
Takahide Ikeda, Tokorozawa, JP;
Kouichirou Yamada, Mitaka, JP;
Osamu Saito, Tokyo, JP;
Masanori Odaka, Kodaira, JP;
Nobuo Tamba, Ohme, JP;
Katsumi Ogiue, Hinode, JP;
Atsushi Hiraishi, Hitachi, JP;
Atsuo Watanabe, Hitachiohta, JP;
Mitsuru Hirao, Tohkai, JP;
Akira Fukami, Hitachi, JP;
Masayuki Ohayashi, Hitachi, JP;
Tadashi Kuramoto, Ohme, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
Disclosed is a bipolar-CMOS LSI manufactured by a simplified process and realizing a higher density of integration as well as a higher operating speed, in which a base lead-out electrode of a bipolar transistor and respective gate electrodes of a p-channel MISFET and an n-channel MISFET of CMOS transistors are made of an identical conductor film, and the conductor film of the gate electrode of the p-channel MISFET is of p-type, while that of the gate electrode of the n-channel MISFET is of n-type.