This inventor holds 1 USPTO granted patent. Top assignee: Seiko Epson Corporation. Active years: 2005.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2005
Title: Kotaro Misawa: Semiconductor Device Inventor.
Introduction
Kotaro Misawa is an inventor associated with Chino, Japan, and Seiko Epson Corporation. His patent work includes a semiconductor device featuring a non-volatile memory transistor.
Latest Patents
Misawa is credited with one patent. His patent, “Semiconductor Device Having a Non-Volatile Memory Transistor Formed on a Semiconductor,” describes a device with an interlayer dielectric layer above the semiconductor layer containing the non-volatile memory transistor. The dielectric electrically isolates a conductive layer formed over the semiconductor layer from the transistor and includes a layer containing nitride.
Career Highlights
The available information connects Misawa’s invention to semiconductor device design and non-volatile memory technology. His listed patent reflects work on insulating structures that help electrically separate components within a semiconductor device.
Collaborations
Misawa is associated with Seiko Epson Corporation. His listed coworker is Tomoyuki Furuhata.
Conclusion
Kotaro Misawa’s recorded patent focuses on a semiconductor device that uses a nitride-containing dielectric layer to isolate a non-volatile memory transistor from an overlying conductive layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile