The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2005
Filed:
Feb. 07, 2002
Applicants:
Tomoyuki Furuhata, Sakata, JP;
Kotaro Misawa, Chino, JP;
Inventors:
Tomoyuki Furuhata, Sakata, JP;
Kotaro Misawa, Chino, JP;
Assignee:
Seiko Epson Corporation, , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L029/78 ;
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a non-volatile memory transistor. An interlayer dielectric layeris provided on a semiconductor layerwhere the non-volatile memory transistoris formed. The interlayer dielectric layeris an insulation layer for electrically isolating a conductive layerformed over the semiconductor layerfrom the non-volatile memory transistor, and includes a layercontaining nitride.