Hanno, Japan

Kosuke Ohsima


Average Co-Inventor Count = 3.4

ph-index = 2

Forward Citations = 16(Granted Patents)


Company Filing History:


Years Active: 2004-2006

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2 patents (USPTO):Explore Patents

Title: Kosuke Ohsima: Innovator in Semiconductor Technology

Introduction

Kosuke Ohsima is a notable inventor based in Hanno, Japan. He has made significant contributions to the field of semiconductor devices, holding a total of 2 patents. His work focuses on improving the performance and reliability of electronic components.

Latest Patents

Ohsima's latest patents include advancements in diode and transistor devices. One of his inventions is a semiconductor device that features improved breakdown voltage. This diode device incorporates relay diffusion layers situated between guard ring portions. This design allows the depletion layer to expand outward from the guard ring portions, reaching the relay diffusion layers and enhancing the overall performance of the device. Additionally, he has developed a Schottky diode that improves withstand voltage by optimizing the distances between various components within the diode structure. This innovation ensures that there are no local concentrations of the electric field, thereby enhancing the device's reliability.

Career Highlights

Ohsima is currently employed at Shindengen Electric Manufacturing Company Limited, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing devices that meet the increasing demands of modern electronics.

Collaborations

Some of his notable coworkers include Mizue Kitada and Shinji Kunori, who have collaborated with him on various projects within the semiconductor field.

Conclusion

Kosuke Ohsima's contributions to semiconductor technology through his innovative patents demonstrate his commitment to advancing the industry. His work not only enhances the performance of electronic devices but also sets a foundation for future innovations in the field.

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