The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2006
Filed:
Feb. 20, 2003
Mizue Kitada, Hanno, JP;
Kosuke Ohsima, Hanno, JP;
Shinji Kunori, Hanno, JP;
Toru Kurosaki, Hanno, JP;
Mizue Kitada, Hanno, JP;
Kosuke Ohsima, Hanno, JP;
Shinji Kunori, Hanno, JP;
Toru Kurosaki, Hanno, JP;
Shindengen Electric Manufacturing Co., Ltd., Tokyo, JP;
Abstract
A semiconductor device having improved breakdown voltage is provided. A diode device of the present invention includes relay diffusion layers provided between guard ring portions. Therefore, a depletion layer expanded outward from the guard ring portions except the outermost one reaches these relay diffusion layers, and then the outer guard ring portions. The width of the distance between the guard ring portions is shorter where the relay diffusion layers are provided. For the width of the relay diffusion layers, the depletion layer reaches the outer guard ring portions with a lower voltage than the conventional structure.