Oita, Japan

Koichi Sato

This inventor holds 1 USPTO granted patent. Top assignee: Toshiba Memory Corporation. Active years: 2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Koichi Sato. Retrieved from https://idiyas.com/inventor/koichi-sato-o4tojclb

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2019

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1 patent (USPTO):Explore Patents

Title: Koichi Sato: Innovator in Semiconductor Technology

Introduction

Koichi Sato is a prominent inventor based in Oita, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique method for producing semiconductor devices.

Latest Patents

Koichi Sato holds a patent for a "Method for producing semiconductor device and semiconductor device." This patent describes a method that includes forming a patterned first insulating film on a semiconductor substrate. The process involves creating a through via hole that exposes the wiring structure, utilizing anisotropic dry etching techniques with a specific gas mixture.

Career Highlights

Sato is associated with Toshiba Memory Corporation, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the production methods of semiconductor devices, showcasing his commitment to innovation in this critical field.

Collaborations

He collaborates with notable colleagues, including Yuki Noda and Ippei Kume. Their combined efforts contribute to the ongoing advancements in semiconductor technology at Toshiba Memory Corporation.

Conclusion

Koichi Sato's contributions to semiconductor technology through his innovative patent and collaboration with esteemed colleagues highlight his role as a key inventor in the industry. His work continues to influence the future of semiconductor device production.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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