Suwon-si, South Korea

Kohji Kanamori

This inventor holds 1 USPTO granted patent and 6 published patent applications. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kohji Kanamori. Retrieved from https://idiyas.com/inventor/kohji-kanamori-sdflghzz

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Kohji Kanamori and Three-Dimensional Memory Technology.

Introduction

Kohji Kanamori is an inventor associated with Samsung Electronics Co., Ltd. His listed patent work concerns three-dimensional nonvolatile memory, a technology designed to store data without continuous power.

Latest Patents

Kanamori is credited with 1 patent: “Three-dimensional nonvolatile memory device including a plurality of memory cells.” The invention describes insulating layers stacked vertically on a substrate and channel layers extending horizontally between them. A diffusion stop layer is formed in a trench through these layers, with crystalline semiconductor patterns positioned between the channel layers and the diffusion stop layer. The patent specifies that the crystalline patterns contain a second metal element at a higher concentration than the first metal element in the channel layers.

Career Highlights

Kanamori’s listed patent is associated with Samsung Electronics Co., Ltd. It addresses structural features intended to support three-dimensional nonvolatile memory devices.

Collaborations

The available information connects Kanamori’s patent work with Samsung Electronics Co., Ltd. It does not identify additional collaborators.

Conclusion

Kohji Kanamori’s recorded invention focuses on the layered structure and material composition of a three-dimensional nonvolatile memory device.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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