Three-dimensional nonvolatile memory device including a plurality of memory cells

Abstract

A three-dimensional nonvolatile memory device includes: a plurality of insulating layers stacked on a substrate in a vertical direction substantially perpendicular to a surface of the substrate; a plurality of channel layers positioned between the plurality of insulating layers, and elongated in a first horizontal direction that is parallel to the surface of the substrate, wherein the plurality of channel layers includes a first metal element; a diffusion stop layer conformally formed in a trench passing through the plurality of insulating layers and the plurality of channel layers in the vertical direction; and a crystalline semiconductor pattern between each of the plurality of channel layers and the diffusion stop layer, wherein the crystalline semiconductor pattern includes a second metal element, wherein a concentration of the second metal element in the crystalline semiconductor pattern is higher than a concentration of the first metal element in the plurality of channel layers.