This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Kanto Kagaku Kabushiki Kaisha. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Kohei Mochida: Innovator in Silicon Nitride Etching Technology
Introduction
Kohei Mochida is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor manufacturing, particularly in the development of etching solutions for silicon nitride. His innovative work addresses critical challenges in the production of advanced memory cells.
Latest Patents
Mochida holds a patent for a silicon nitride etching liquid composition. This invention provides a solution for selectively etching silicon nitride (SiN) with practical selectivity concerning silicon oxide (SiO). The composition effectively suppresses the regrowth of SiO and minimizes pattern collapse during the production of 3D nonvolatile memory cells. The etching liquid composition includes phosphoric acid, one or more silane coupling agents, and water, while notably excluding ammonium ions. This innovation is crucial for enhancing the reliability and efficiency of memory cell production.
Career Highlights
Kohei Mochida is associated with Kanto Kagaku Kabushiki Kaisha, a company known for its advancements in chemical solutions for the semiconductor industry. His work has been instrumental in pushing the boundaries of etching technology, contributing to the development of more efficient manufacturing processes.
Collaborations
Mochida collaborates with Yuki Yoshida, a fellow innovator in the field. Their partnership has fostered advancements in etching technologies, further enhancing the capabilities of semiconductor manufacturing.
Conclusion
Kohei Mochida's contributions to silicon nitride etching technology exemplify the importance of innovation in the semiconductor industry. His patented solutions are paving the way for more efficient and reliable memory cell production.