The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Mar. 06, 2020
Applicant:
Kanto Kagaku Kabushiki Kaisha, Tokyo, JP;
Inventors:
Assignee:
Kanto Kagaku Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
C09K 13/06 (2006.01); H10P 50/28 (2026.01);
U.S. Cl.
CPC ...
C09K 13/06 (2013.01); H10P 50/283 (2026.01);
Abstract
The present: invention addresses the problem of providing a silicon nitride etching liquid composition which is capable of selectively etching SiNwith a practical etching selectivity with respect to SiO, while suppressing regrowth of SiO, and which is also capable of suppressing pattern collapse of an SiOfilm in the production of a 3D nonvolatile memory cell. A silicon nitride etching liquid composition for producing a 3D nonvolatile memory cell, which contains phosphoric acid, one or more silane coupling agents and water, but which does not contain ammonium ions.