Tokyo, Japan

Kohei Kawabata

This inventor holds 1 USPTO granted patent and 6 published patent applications. Top assignee: Ablic Inc.. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kohei Kawabata. Retrieved from https://idiyas.com/inventor/kohei-kawabata

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: The Innovations of Kohei Kawabata

Introduction

Kohei Kawabata is a notable inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology. His work focuses on enhancing the performance and reliability of semiconductor devices.

Latest Patents

Kawabata holds a patent for a semiconductor device and method of manufacturing the same. This innovative semiconductor device includes a semiconductor substrate and a field-effect transistor used in analog circuits. It features a P-type gate electrode and an interlayer insulating film. Additionally, it incorporates a hydrogen shielding metal or metallic film that covers the P-type gate electrode, effectively shielding it from hydrogen.

Career Highlights

Kawabata is associated with Ablic Inc., a company known for its advancements in semiconductor technology. His work has contributed to the development of more efficient and reliable semiconductor devices.

Collaborations

He has collaborated with notable colleagues such as Hisashi Hasegawa and Takeshi Koyama. Their combined expertise has furthered the innovations in the semiconductor field.

Conclusion

Kohei Kawabata's contributions to semiconductor technology exemplify the importance of innovation in modern electronics. His patent reflects a commitment to advancing the capabilities of semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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