The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2023
Filed:
Oct. 28, 2020
Applicant:
Ablic Inc., Tokyo, JP;
Inventors:
Hisashi Hasegawa, Tokyo, JP;
Takeshi Koyama, Tokyo, JP;
Shinjiro Kato, Tokyo, JP;
Kohei Kawabata, Tokyo, JP;
Assignee:
ABLIC INC., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 27/0883 (2013.01); H01L 23/53219 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate, a field-effect transistor arranged at least partially on the semiconductor substrate and used in an analog circuit, and having a P-type gate electrode, an interlayer insulating film arranged on the field-effect transistor, and a hydrogen shielding metal or metallic film arranged on the interlayer insulting film and covering the P-type gate electrode and configured to shield hydrogen.