Taichung City, Taiwan

Ko-Pin Kao

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ko-Pin Kao. Retrieved from https://idiyas.com/inventor/ko-pin-kao-qlng19oq

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Ko-Pin Kao and His Semiconductor Lithography Patent.

Introduction

Ko-Pin Kao is an inventor associated with Taichung City, Taiwan. His patent work concerns photomasks and lithography, technologies used to pattern features during semiconductor manufacturing. Kao is associated with Taiwan Semiconductor Manufacturing Company Limited.

Latest Patents

Kao is credited with 1 patent: “Photo Mask and Lithography Method Using the Same.” The invention describes a photomask with device features and two types of assist features. A first assist feature is placed near the device features in the patterning region to correct optical proximity effects during photolithography. A second, sub-resolution correction feature is placed in a non-patterning region, at a distance from the nearest device feature greater than the spacing between adjacent device features. This arrangement addresses optical effects while distinguishing the roles and placement of the assist features.

Career Highlights

Kao’s listed patent reflects work related to photolithography and semiconductor patterning. The disclosed approach focuses on the placement of assist features to support accurate pattern transfer.

Collaborations

Kao’s listed coworkers include Bao-Chin Li and Chung-Kai Huang. Their names are associated with the same professional context provided for this patent information.

Conclusion

Ko-Pin Kao’s patent highlights a photomask design approach that uses differently positioned assist features to address optical proximity effects in semiconductor lithography.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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