Baldham, Germany

Klaus Max Schruefer

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Intel Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Klaus Max Schruefer. Retrieved from https://idiyas.com/inventor/klaus-max-schruefer

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Klaus Max Schruefer and Integrated-Circuit Power-Rail Innovation.

Introduction

Klaus Max Schruefer is an inventor based in Baldham, Germany, associated with Intel Corporation. His patent work concerns integrated-circuit architecture and power delivery.

Latest Patents

Schruefer is named on 1 patent, titled “Replacement Via and Buried or Backside Power Rail.” The patent describes an integrated-circuit structure with two transistor devices positioned over laterally spaced sub-fins. A continuous conductive body extends between the devices and sub-fins, with upper and lower portions connected through a conductive interconnect feature to at least one transistor contact. A conformal layer follows the sidewalls of the conductive body. This arrangement addresses the integration of a replacement via with a buried or backside power rail.

Career Highlights

Schruefer’s listed patent reflects work on semiconductor structures and power-delivery design at Intel Corporation. The invention focuses on connecting transistor contacts to a conductive body that spans different levels of an integrated-circuit structure.

Collaborations

Prashant Majhi is identified as Schruefer’s coworker. The available information does not specify whether Majhi collaborated on this patent.

Conclusion

Klaus Max Schruefer’s patent highlights an approach to integrating conductive interconnects and buried or backside power rails in semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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