Klagenfurt, Austria

Klaus Goeschl

This inventor holds 1 USPTO granted patent. Top assignee: Infineon Technologies Ag. Active years: 2021.


% Patents Active = 100.0

Average Co-Inventor Count = 12.0

ph-index = 1


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Klaus Goeschl: Innovator in Semiconductor Technology

Introduction

Klaus Goeschl is a notable inventor based in Klagenfurt, Austria. He has made significant contributions to the field of semiconductor technology, particularly in the development of silicon-insulator layers.

Latest Patents

Klaus Goeschl holds a patent titled "Methods of forming a silicon-insulator layer and semiconductor device having the same." This patent describes a method of forming a silicon-insulator layer by arranging a silicon structure in a plasma etch process chamber. The process involves applying plasma to the silicon structure at a temperature equal to or below 100°C. The plasma includes a component and a halogen derivative, resulting in the formation of the silicon-insulator layer, which comprises silicon and the component.

Career Highlights

Klaus Goeschl is associated with Infineon Technologies AG, where he has been instrumental in advancing semiconductor technologies. His work has led to innovations that enhance the performance and efficiency of semiconductor devices.

Collaborations

Klaus has collaborated with notable colleagues such as Joachim Hirschler and Georg Ehrentraut, contributing to various projects within the semiconductor industry.

Conclusion

Klaus Goeschl's work in semiconductor technology, particularly his patent on silicon-insulator layers, showcases his innovative spirit and dedication to advancing the field. His contributions continue to influence the development of efficient semiconductor devices.

Profile summary based on public USPTO records.
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