This inventor holds 1 USPTO granted patent. Top assignee: Infineon Technologies Ag. Active years: 2012.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2012
Title: Klaus Arnim Von: Innovator in Static Random Access Memory Technology
Introduction
Klaus Arnim Von is a notable inventor based in Munich, Germany. He has made significant contributions to the field of memory technology, particularly with his innovative designs in static random access memory (SRAM) cells. His work has implications for the efficiency and performance of electronic devices.
Latest Patents
Klaus Arnim Von holds a patent for a static random access memory cell. This invention includes a first inverter with a first n-channel pull-down transistor connected to a ground voltage. Additionally, it features a second inverter with a second n-channel pull-down transistor, also linked to the ground voltage. The design incorporates a first n-channel access transistor and a second n-channel access transistor, both of which have fins with lower charge carrier mobility compared to their respective pull-down transistors. This innovative approach enhances the functionality and efficiency of SRAM technology. He has 1 patent to his name.
Career Highlights
Klaus Arnim Von is currently employed at Infineon Technologies AG, a leading company in semiconductor solutions. His role at Infineon has allowed him to work on cutting-edge technologies that drive advancements in memory and processing capabilities.
Collaborations
Throughout his career, Klaus has collaborated with talented professionals such as Joerg Berthold and Christian Pacha. These collaborations have fostered an environment of innovation and creativity, contributing to the development of advanced memory technologies.
Conclusion
Klaus Arnim Von is a distinguished inventor whose work in static random access memory technology has made a significant impact in the field. His contributions continue to influence the development of efficient electronic devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
