The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2012

Filed:

Mar. 28, 2011
Applicants:

Joerg Berthold, Munich, DE;

Christian Pacha, Neukeferloh, DE;

Klaus Arnim Von, Munich, DE;

Inventors:

Joerg Berthold, Munich, DE;

Christian Pacha, Neukeferloh, DE;

Klaus Arnim Von, Munich, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract

One or more embodiments relate to a static random access memory cell comprising: a first inverter including a first n-channel pull-down transistor coupled between a first node and a ground voltage; a second inverter including a second n-channel pull-down transistor coupled between a second node and the ground voltage; a first n-channel access transistor coupled between a first bit line and the first node of the first inverter, a fin of the first n-channel access transistor having a lower charge carrier mobility than a fin of the first n-channel pull-down transistor; and a second n-channel access transistor coupled between a second bit line and the second node of the second inverter, a fin of the second n-channel access transistor having a lower charge carrier mobility than a fin of the second n-channel pull-down transistor.


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