Kiyohisa Inao

Title: Kiyohisa Inao: Innovator in Photosensor Technology

Introduction

Kiyohisa Inao is a notable inventor based in Hachioji, Japan. He has made significant contributions to the field of photosensor technology, holding a total of 4 patents. His work focuses on enhancing the efficiency and functionality of photosensors through innovative materials and designs.

Latest Patents

One of Inao's latest patents is a storage type photosensor that incorporates silicon and hydrogen. This photosensor features a light-transmitting conductive layer positioned on the side of light incidence, along with a photoconductive layer that stores charges in response to light. The photoconductive layer is made from an amorphous material containing at least 50 atomic % silicon and between 10 to 50 atomic % hydrogen, ensuring a resistivity of no less than 10¹⁰ Ω·cm. Another significant patent is for a radiation-sensitive screen, which consists of a crystalline silicon substrate on the radiation incidence side and an amorphous silicon film containing hydrogen on the opposite side. This invention allows for high-resolution imaging and can be utilized in various applications, including image pickup tubes and X-ray fluorescence multiplier tubes.

Career Highlights

Throughout his career, Kiyohisa Inao has worked with prominent companies such as Hitachi, Ltd. and Hitachi Denshi Kabushiki Kaisha. His experience in these organizations has contributed to his expertise in developing advanced technologies in the field of photosensors.

Collaborations

Inao has collaborated with notable colleagues, including Eiichi Maruyama and Tadaaki Hirai. Their combined efforts have furthered the development of innovative technologies in their respective fields.

Conclusion

Kiyohisa Inao's contributions to photosensor technology demonstrate his commitment to innovation and excellence. His patents reflect a deep understanding of materials science and engineering, paving the way for advancements in imaging technologies.