The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 1981

Filed:

May. 16, 1979
Applicant:
Inventors:

Eiichi Maruyama, Kodaira, JP;

Yoshinori Imamura, Hachioji, JP;

Saburo Ataka, Hinodamachi, JP;

Kiyohisa Inao, Mobara, JP;

Yukio Takasaki, Hachioji, JP;

Toshihisa Tsukada, TokySekimachi, JP;

Tadaaki Hirai, Koganei, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J / ; H01J / ;
U.S. Cl.
CPC ...
313366 ; 313386 ; 313392 ;
Abstract

In a photosensor having at least a light-transmitting conductive layer which is arranged on the side of light incidence, and a photoconductive layer in which charges are stored in correspondence with the light incidence; a photosensor characterized in that at least a region of said photoconductive layer for storing the charges is made of an amorphous material which contains hydrogen and silicon as indispensable constituent elements thereof, in which the silicon amounts to at least 50 atomic % and the hydrogen amounts to at least 10 atomic % and at most 50 atomic %, and whose resistivity is not lower than 10.sup.10 .OMEGA..multidot.cm.


Find Patent Forward Citations

Loading…