Kin-On Sin

Title: Kin-On Sin: Innovator in Semiconductor Technology

Introduction

Kin-On Sin is a notable inventor based in Kowloon, China. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on enhancing the manufacturing processes of semiconductor devices, which are crucial for modern electronics.

Latest Patents

Among his latest patents is the "MOS-driven semiconductor device and method for manufacturing MOS-driven semiconductor device." This invention involves a mask used to form an nsource layer, which is created by a nitride film on the surface of a substrate before a trench is formed. This process ensures a sufficient width of the nsource layer on the substrate's surface, leading to stable contact between the nsource layer and a source electrode. Additionally, a CVD oxide film, serving as an interlayer insulating film, is formed on doped poly-silicon to be used as a gate electrode embedded in the trench. Non-doped poly-silicon, which is not oxidized, is then formed on the CVD oxide film. This innovative approach suppresses the generation of voids in the CVD oxide film and facilitates the easy manufacturing of semiconductor apparatuses.

Career Highlights

Kin-On Sin is currently employed at Fuji Electric Co., Ltd., where he continues to develop cutting-edge technologies in the semiconductor industry. His expertise and innovative mindset have positioned him as a key player in his field.

Collaborations

Throughout his career, Kin-On Sin has collaborated with talented individuals such as Chun-Wai Ng and Hitoshi Sumida. These partnerships have contributed to the advancement of semiconductor technologies and have fostered a collaborative environment for innovation.

Conclusion

Kin-On Sin's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the industry. His work not only advances the field but also paves the way for future innovations in electronics.