Kimio Hara

Title: Kimio Hara: Innovator in Semiconductor Technology

Introduction

Kimio Hara is a notable inventor based in Kanagawa, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative designs and methods.

Latest Patents

Hara holds a patent for a semiconductor device and method of manufacturing the same. This invention involves a semiconductor device featuring an LDMOSFET, where the source electrode is positioned at the back surface. To minimize electric resistance between the source contact region on the top surface and the back surface source electrode, a poly-silicon buried plug is utilized. This plug extends from the upper surface into a P-type substrate through a P-type epitaxial layer and is heavily doped with boron. The design addresses issues related to dislocation in a mono-crystalline silicon region around the poly-silicon buried plug, which can lead to leakage failures. The semiconductor device incorporates a silicon-based plug that extends through the boundary surface between two semiconductor layers with differing impurity concentrations, ensuring that at least the interior of the plug is a poly-crystalline region.

Career Highlights

Kimio Hara is currently employed at Renesas Electronics Corporation, where he continues to advance semiconductor technology. His work has been instrumental in developing efficient and reliable semiconductor devices.

Collaborations

Hara has collaborated with notable colleagues, including Hiroyuki Arie and Nobuaki Umemura, contributing to various projects and innovations in the semiconductor field.

Conclusion

Kimio Hara's contributions to semiconductor technology through his innovative patents and collaborations highlight his importance in the industry. His work continues to influence advancements in semiconductor devices, showcasing the impact of dedicated inventors in technology.