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Title: Kim Kisslinger: Innovator in Memory Device Technology
Introduction
Kim Kisslinger is a notable inventor based in Manorville, NY (US). She has made significant contributions to the field of memory device technology, particularly through her innovative patent in resistive random access memory (RRAM) devices. Her work exemplifies the intersection of organic and inorganic materials in advancing electronic memory solutions.
Latest Patents
Kisslinger's most recent patent is titled "Metal-oxide infiltrated organic-inorganic hybrid resistive random-access memory device." This invention involves a resistive random access memory (RRAM) device that comprises a plurality of memory cells. Each memory cell includes first and second electrodes, along with an organic thin film compound mixed with silver perchlorate (AgClO) salt as a base layer. The base layer is formed on the upper surface of the first electrode, while the second electrode is placed on the upper surface of the base layer. The resistive switching characteristics of the RRAM device are controlled based on the concentration of AgClO salt in the base layer, and variations in device switching parameters are influenced by the amount of infiltrated metal oxide molecules.
Career Highlights
Throughout her career, Kim Kisslinger has worked with esteemed organizations such as Brookhaven Science Associates, LLC and The State University of New York. Her experience in these institutions has allowed her to develop her expertise in memory device technology and contribute to groundbreaking research.
Collaborations
Kisslinger has collaborated with notable colleagues, including Chang-Yong Nam and Ashwanth Subramanian. These partnerships have further enriched her work and expanded the impact of her innovations in the field.
Conclusion
Kim Kisslinger is a pioneering inventor whose work in resistive random access memory technology showcases her innovative spirit and dedication to advancing electronic memory solutions. Her contributions continue to influence the field and inspire future developments in memory device technology.