The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Jun. 30, 2022
Brookhaven Science Associates, Llc, Upton, NY (US);
The Research Foundation for the State University of New York, Albany, NY (US);
Chang-Yong Nam, Stony Brook, NY (US);
Ashwanth Subramanian, Tualatin, OR (US);
Nikhil Tiwale, Medford, NY (US);
Kim Kisslinger, Manorville, NY (US);
Brookhaven Science Associates, LLC, Upton, NY (US);
The Research Foundation for The State University of New York, Albany, NY (US);
Abstract
A resistive random access memory (RRAM) device includes a plurality of memory cells, each of at least a subset of the memory cells including first and second electrodes and an organic thin film compound mixed with silver perchlorate (AgClO) salt as a base layer that is incorporated with a prescribed quantity of inorganic metal oxide molecules using vapor-phase infiltration (VPI), the base layer being formed on an upper surface of the first electrode and the second electrode being formed on an upper surface of the base layer. Resistive switching characteristics of the RRAM device are controlled as a function of a concentration of AgClOsalt in the base layer. A variation of device switching parameters is controlled as a function of an amount of infiltrated metal oxide molecules in the base layer.