Company Filing History:
Years Active: 1999-2002
Title: Innovations of Ki Jae Huh in Semiconductor Technology
Introduction
Ki Jae Huh is a prominent inventor based in Chungcheongbuk-do, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of metal-oxide-semiconductor (MOS) devices. With a total of three patents to his name, Huh's work has advanced the understanding and fabrication of semiconductor devices.
Latest Patents
One of Huh's latest patents is focused on a MOS device having a non-uniform dopant concentration and the method for fabricating the same. This invention involves a metal-oxide-semiconductor device where the non-uniform dopant concentration in the channel region is achieved through ion implantation via a polysilicon gate electrode. The polysilicon is oxidized using a semirecessed LOCOS process to create a non-uniform cross-section. The semiconductor device includes a substrate of a first conductivity type, a gate insulator, and a gate electrode with distinct regions. The source and drain doped regions are self-aligned to the gate electrode, while the channel doped region has a peak dopant concentration profile that varies under the gate electrode.
Career Highlights
Ki Jae Huh is currently associated with LG Semicon Co., Ltd., where he continues to innovate in semiconductor technology. His work has been instrumental in enhancing the performance and efficiency of MOS devices, contributing to advancements in the electronics industry.
Collaborations
Huh collaborates with Jeong Hwan Son, a fellow innovator in the field. Their partnership has fostered a productive environment for research and development in semiconductor technologies.
Conclusion
Ki Jae Huh's contributions to semiconductor technology, particularly through his innovative patents, have positioned him as a key figure in the industry. His work continues to influence the development of advanced electronic devices.