The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 1999
Filed:
Jan. 17, 1997
Applicant:
Inventors:
Ki Jae Huh, Chungcheongbuk-do, KR;
Jeong Hwan Son, Daejen-si, KR;
Assignee:
LG Semicon Co., Ltd., Chungcheongbuk-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438439 ; 438225 ; 438297 ; 438456 ;
Abstract
A method for forming an isolating layer in a semiconductor device includes the steps of forming a first material layer on an active layer having a major axis and a minor axis, forming a second material layer in a form of sidewall at sides of the first material layer in a direction of the major axis, and conducting field oxidation using the first and second material layers as masks to form the isolating layer.