Lg Semicon Co., Ltd.

Ki Jae Huh

Jeong Hwan Son

A metal-oxide-semiconductor (MOS) device in which the nonuniform dopant concentration in the channel region is obtained by means of ion implantation through a polysilicon gate electrode of nonuniform cross section, which is itself obtained by oxidizing the polysilicon using a semirecessed LOCOS process. The present invention is directed most generally to a semiconductor device which includes: a semiconductor substrate of a first conductivity type; a gate insulator on the substrate, the gate insulator sharing an interface with the substrate; a gate electrode on the gate insulator, the gate electrode having a first side, a second side, and a middle region between the first and second sides; a source doped region of a second conductivity type within the substrate to the first side of the gate electrode and a drain doped region of the second conductivity type within the substrate to the second side of the gate electrode, the source and drain doped regions self-aligned to the gate electrode; and a channel doped region of the first conductivity type within the substrate below the gate electrode, the channel doped region having a peak dopant concentration profile such that the peak dopant concentration under the middle region of the gate electrode occurs further below the gate insulator-substrate interface than does either the peak dopant concentration under the first side of the gate electrode or the peak dopant concentration under the second side of the gate electrode.

MOS device having non-uniform dopant concentration and method for fabricating the same

MOS device and fabrication method

A method for forming an isolating layer in a semiconductor device includes the steps of forming a first material layer on an active layer having a major axis and a minor axis, forming a second material layer in a form of sidewall at sides of the first material layer in a direction of the major axis, and conducting field oxidation using the first and second material layers as masks to form the isolating layer.

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Chungcheongbuk-do, South Korea

Ki Jae Huh