Braintree, MA, United States of America

Khanh Vo

This inventor holds 1 USPTO granted patent. Top assignee: Asmpt Nexx, Inc.. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Khanh Vo. Retrieved from https://idiyas.com/inventor/khanh-vo-v8lfdsvh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Innovations of Khanh Vo

Introduction

Khanh Vo is an accomplished inventor based in Braintree, MA (US). He has made significant contributions to the field of semiconductor technology. His innovative approach has led to the development of a unique patent that enhances the efficiency of semiconductor substrate applications.

Latest Patents

Khanh Vo holds a patent for "Substrate support features and method of application." This patent describes a method for applying raised features to a semiconductor substrate chuck. Each feature acts to space a substrate from the chuck during use. The method comprises several steps that improve the overall functionality and performance of semiconductor applications.

Career Highlights

Khanh Vo is currently employed at Asmpt Nexx, Inc., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the capabilities of substrate applications in the industry. With a focus on innovation, Khanh has established himself as a key player in his field.

Collaborations

Khanh has collaborated with notable colleagues, including I-Kuan Lin and Arthur Sommerstein. These partnerships have fostered a creative environment that encourages the exchange of ideas and technological advancements.

Conclusion

Khanh Vo's contributions to semiconductor technology through his patent and work at Asmpt Nexx, Inc. highlight his innovative spirit and dedication to advancing the field. His achievements serve as an inspiration for future inventors and innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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