Fontaine, France

Khaled Driche

This inventor holds 1 USPTO granted patent. Top assignees: Centre National De La Recherche Scientifique, Diamfab, Institut Polytechnique De Grenoble. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Khaled Driche. Retrieved from https://idiyas.com/inventor/khaled-driche

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Khaled Driche - Innovator in Semiconductor Capacitor Technology.

Introduction

Khaled Driche is an inventor based in Fontaine, France. He is known for his innovative work in the field of semiconductor technology. His research focuses on developing advanced capacitors that utilize materials with wide bandgap properties.

Latest Patent Applications

Khaled Driche has filed a patent application for a "CAPACITOR COMPRISING A STACK OF LAYERS MADE OF A SEMICONDUCTOR MATERIAL HAVING A WIDE BANDGAP." This application describes a capacitor that consists of a stack of layers made from a semiconductor material with a band gap energy greater than 2.3 eV. The design includes an electrically insulating intermediate layer with a resistivity greater than 10 kohm·cm, which incorporates n- or p-type deep dopants. These dopants create energy levels that are more than 0.4 eV from the conduction band or the valence band of the semiconductor material. Additionally, the capacitor features two contact layers with a resistivity less than or equal to 10 kohm·cm, containing dopants of a type opposite to that of the deep dopants in the intermediate layer. These contact layers are strategically arranged on either side of the intermediate layer to form two pin junctions.

Conclusion

Khaled Driche is an emerging inventor in the field of semiconductor capacitors, with a focus on innovative designs that enhance performance. His contributions to the field are noteworthy, and his patent application reflects his commitment to advancing technology in this area.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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