The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Mar. 03, 2022
Diamfab, Grenoble Cedex, FR;
Centre National DE LA Recherche Scientifique, Paris, FR;
Institut Polytechnique DE Grenoble, Grenoble, FR;
Universite Grenoble Alpes, Saint Martin d-Heres, FR;
Gauthier Chicot, Fontaine, FR;
Khaled Driche, Fontaine, FR;
David Eon, Grenoble, FR;
Etienne Gheeraert, Coublevie, FR;
Cédric Masante, Fontaine, FR;
Julien Pernot, Grenoble, FR;
Diamfab, Grenoble Cedex, FR;
Centre National De La Recherche Scientifique, Paris, FR;
Institut Polytechnique de Grenoble, Grenoble, FR;
Universite Grenoble Alpes, Saint Martin d-Heres, FR;
Abstract
A capacitor comprises a stack of layers made of a semiconductor material having a band gap energy greater than 2.3 eV, the stack of layers comprising: an electrically insulating intermediate layer having a resistivity greater than 10 kohm·cm and comprising n- or p-type deep dopants producing energy levels more than 0.4 eV from the conduction band or the valence band of the semiconductor material, two contact layers having a resistivity less than or equal to 10 kohm·cm and comprising dopants of a type opposite to that of the deep dopants of the intermediate layer, the two contact layers being arranged on either side of the intermediate layer to form two pn junctions.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile