Company Filing History:
1 out of 27,427 
1 out of 54,780 
Years Active: 2001-2003
Title: Kevin Liao: Innovator in Memory Design
Introduction
Kevin Liao is a notable inventor based in Fort Collins, Colorado. He has made significant contributions to the field of memory design, holding 2 patents that showcase his innovative approaches to improving memory technology.
Latest Patents
One of Kevin's latest patents is titled "Method and apparatus to minimize additional address bits and loading when adding a small patch RAM to a microcode ROM." This invention addresses the challenge of overlaying a random access memory (RAM) address space over a read-only memory (ROM) address space. By minimizing traditional address bits and the loading of an address decoder, this method eliminates conflicts between the ROM and RAM in the overlap region, thus enhancing efficiency.
Another significant patent is "Multiple input bit-line detection with phase stealing latch in a memory design." This invention provides a method for sensing and temporarily latching data signals from memory cells. It involves precharging multiple input bit-lines during a clock cycle and sensing a discharged input bit-line in a subsequent phase. This innovative approach improves the performance of memory devices by ensuring accurate data signal processing.
Career Highlights
Throughout his career, Kevin has worked with prominent companies such as Hewlett-Packard Development Company, L.P. and Intel Corporation. His experience in these leading technology firms has allowed him to refine his skills and contribute to groundbreaking advancements in memory technology.
Collaborations
Kevin has collaborated with notable colleagues, including Russell C. Brockmann and Joel D. Lamb. These partnerships have fostered a creative environment that has led to innovative solutions in the field of memory design.
Conclusion
Kevin Liao's contributions to memory technology through his patents and career experiences highlight his role as an influential inventor. His work continues to impact the industry, paving the way for future innovations in memory design.