Kevin C Lee

Title: Kevin Lee: Innovator in Light-Emitting Field-Effect Transistors

Introduction

Kevin Lee is a prominent inventor based in Ithaca, NY (US). He has made significant contributions to the field of light-emitting technology, particularly through his innovative patent related to field-effect transistors.

Latest Patents

Kevin Lee holds a patent for "Bottom tunnel junction light-emitting field-effect transistors." This invention describes a method for achieving voltage-controlled gate-modulated light emission using monolithic integration of fin- and nanowire- n-i-n vertical FETs with bottom-tunnel junction planar InGaN LEDs. The method takes advantage of the improved performance of bottom-tunnel junction LEDs over their top-tunnel junction counterparts. It allows for strong gate control on a low-cross-sectional area fin or wire without sacrificing LED active area as seen in lateral integration designs. The device achieves electrical modulation of 5 orders and an order of magnitude of optical modulation.

Career Highlights

Kevin Lee is affiliated with Cornell University, where he continues to advance his research and development in the field of light-emitting technologies. His work has garnered attention for its innovative approach and practical applications.

Collaborations

Kevin has collaborated with notable colleagues such as Shyam Bharadwaj and Kazuki Nomoto, contributing to the advancement of technology in his field.

Conclusion

Kevin Lee is a distinguished inventor whose work in light-emitting field-effect transistors showcases his innovative spirit and dedication to advancing technology. His contributions are paving the way for future developments in this exciting area of research.