The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Jul. 13, 2021
Cornell University, Ithaca, NY (US);
Shyam Bharadwaj, Ithaca, NY (US);
Kevin Lee, Ithaca, NY (US);
Kazuki Nomoto, Ithaca, NY (US);
Austin Hickman, Hickman, NY (US);
Len Van Deurzen, Ithaca, NY (US);
Huili Grace Xing, Ithaca, NY (US);
Debdeep Jena, Ithaca, NY (US);
Vladimir Protasenko, Ithaca, NY (US);
Cornell University, Ithaca, NY (US);
Abstract
A method for achieving voltage-controlled gate-modulated light emission using monolithic integration of fin- and nanowire- n-i-n vertical FETs with bottom-tunnel junction planar InGaN LEDs is described. This method takes advantage of the improved performance of bottom-tunnel junction LEDs over their top-tunnel junction counterparts, while allowing for strong gate control on a low-cross-sectional area fin or wire without sacrificing LED active area as in lateral integration designs. Electrical modulation of 5 orders, and an order of magnitude of optical modulation are achieved in the device.