Len Van Deurzen

Title: The Innovations of Len Van Deurzen

Introduction

Len Van Deurzen is an accomplished inventor based in Ithaca, NY. He is known for his significant contributions to the field of light-emitting transistors. His innovative work has led to the development of advanced technologies that enhance the performance of electronic devices.

Latest Patents

Len Van Deurzen holds a patent for a method titled "Bottom tunnel junction light-emitting field-effect transistors." This patent describes a technique for achieving voltage-controlled gate-modulated light emission through the monolithic integration of fin- and nanowire-n-i-n vertical FETs with bottom-tunnel junction planar InGaN LEDs. The method leverages the superior performance of bottom-tunnel junction LEDs compared to their top-tunnel junction counterparts. It allows for strong gate control on a low-cross-sectional area fin or wire without compromising the LED active area, as seen in lateral integration designs. The device achieves electrical modulation of five orders and an order of magnitude of optical modulation.

Career Highlights

Len Van Deurzen is affiliated with Cornell University, where he continues to push the boundaries of innovation in his field. His work has garnered attention for its potential applications in various electronic devices.

Collaborations

Len has collaborated with notable colleagues, including Shyam Bharadwaj and Kevin Lee. Their combined expertise contributes to the advancement of research and development in light-emitting technologies.

Conclusion

Len Van Deurzen's innovative contributions to the field of light-emitting transistors exemplify the impact of research and development in modern technology. His work continues to inspire advancements that may shape the future of electronic devices.