Austin Hickman

Title: Austin Hickman: Innovator in Light-Emitting Field-Effect Transistors

Introduction

Austin Hickman is a notable inventor based in Hickman, NY (US). He has made significant contributions to the field of light-emitting technology, particularly through his innovative patent that focuses on enhancing the performance of light-emitting devices.

Latest Patents

Austin Hickman holds a patent for "Bottom tunnel junction light-emitting field-effect transistors." This invention describes a method for achieving voltage-controlled gate-modulated light emission using monolithic integration of fin- and nanowire-n-i-n vertical FETs with bottom-tunnel junction planar InGaN LEDs. The method takes advantage of the improved performance of bottom-tunnel junction LEDs over their top-tunnel junction counterparts. It allows for strong gate control on a low-cross-sectional area fin or wire without sacrificing LED active area, as seen in lateral integration designs. The device achieves electrical modulation of 5 orders and an order of magnitude of optical modulation.

Career Highlights

Austin Hickman is affiliated with Cornell University, where he continues to push the boundaries of research in light-emitting technologies. His work has garnered attention for its innovative approach and practical applications in the field.

Collaborations

Austin has collaborated with notable colleagues such as Shyam Bharadwaj and Kevin Lee, contributing to a dynamic research environment that fosters innovation and development.

Conclusion

Austin Hickman's contributions to the field of light-emitting technology through his patent demonstrate his commitment to advancing innovation. His work at Cornell University and collaborations with esteemed colleagues further highlight his impact in the realm of inventions.