This inventor holds 1 USPTO granted patent. Top assignee: Kec Corporation. Active years: 2012.
Company Filing History:
Years Active: 2012
Title: Keum Hwang: Innovator in Power Semiconductor Technology
Introduction
Keum Hwang is a notable inventor based in Gumi-si, South Korea. He has made significant contributions to the field of power semiconductor devices. His innovative approach has led to the development of a unique device that enhances the transmission of gate signals.
Latest Patents
Hwang holds a patent for a power semiconductor device and method of manufacturing the same. This device is capable of transmitting gate signals in all directions on a plane. The design includes first conductive regions formed to a predetermined depth in a conductive low concentration epitaxial layer. These regions consist of linear first conductive layers and linear second conductive layers, which are spaced from each other. Additionally, second conductive regions are formed to a smaller width and depth than the first and second conductive layers, creating channels within them. A gate oxide layer is also incorporated, defining first and second windows with smaller widths than the conductive layers. A gate polysilicon layer is formed on the gate oxide layer, completing the innovative design.
Career Highlights
Keum Hwang is currently employed at KEC Corporation, where he continues to advance his research and development in semiconductor technology. His work has been instrumental in pushing the boundaries of what is possible in power semiconductor devices.
Collaborations
Hwang collaborates with his coworker, Hong Pyo Heo, to further enhance their projects and innovations in the semiconductor field.
Conclusion
Keum Hwang's contributions to power semiconductor technology exemplify the spirit of innovation. His patent reflects a significant advancement in the field, showcasing his expertise and dedication to improving electronic devices.