Keran Zhou

Title: Keran Zhou - Innovator in Semiconductor Technology

Introduction

Keran Zhou is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in methods that enhance the manufacturing processes of electronic components. His innovative approach has led to the development of a patented method that addresses critical challenges in the industry.

Latest Patents

Keran Zhou holds a patent for a method of filling shallow trenches. This method involves successively forming a first oxide layer and a second oxide layer over the surface of a silicon substrate where shallow trenches are formed. The process includes etching the second oxide layer to create inner sidewalls using an etchant with a high etching selectivity ratio. Following this, a high-quality pad oxide layer is grown through thermal oxidation after the inner sidewalls are removed. Finally, the trenches are filled with an isolation dielectric material. This innovative method reduces the risk of junction spiking and electrical leakage during the subsequent process of forming a metal silicide. He has 1 patent to his name.

Career Highlights

Keran Zhou is currently employed at Shanghai Hua Hong NEC Electronics Company, Limited. His work at this leading electronics firm has allowed him to apply his innovative ideas in a practical setting, contributing to advancements in semiconductor manufacturing.

Collaborations

Throughout his career, Keran has collaborated with notable colleagues, including Fan Chen and Xiongbin Chen. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of cutting-edge technologies.

Conclusion

Keran Zhou's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the field. His work not only addresses existing challenges but also paves the way for future developments in electronics.