The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Dec. 05, 2012
Shanghai Hua Nec Electronics Co., Ltd., Shanghai, CN;
Fan Chen, Shanghai, CN;
Xiongbin Chen, Shanghai, CN;
Kai Xue, Shanghai, CN;
Keran Zhou, Shanghai, CN;
Jia Pan, Shanghai, CN;
Hao Li, Shanghai, CN;
Yongcheng Wang, Shanghai, CN;
Shanghai Hua Hong NEC Electronics Co., Ltd., Shanghai, CN;
Abstract
A method of filling shallow trenches is disclosed. The method includes: successively forming a first oxide layer and a second oxide layer over the surface of a silicon substrate where shallow trenches are formed in; etching the second oxide layer to form inner sidewalls with an etchant which has a high etching selectivity ratio of the second oxide layer to the first oxide layer; growing a high-quality pad oxide layer by thermal oxidation after the inner sidewalls are removed; and filling the trenches with an isolation dielectric material. By using this method, the risk of occurrence of junction spiking and electrical leakage during a subsequent process of forming a metal silicide can be reduced.