Location History:
- Gunma, JP (2009 - 2011)
- Ota, JP (2013)
Company Filing History:
Years Active: 2009-2013
Title: Kentaro Ooka: Innovator in Semiconductor Technology
Introduction
Kentaro Ooka is a notable inventor based in Gunma, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on improving semiconductor devices and their manufacturing processes.
Latest Patents
One of his latest patents is a semiconductor device and method of manufacturing the same. This invention includes a protection diode designed to prevent electrostatic breakdown by employing a low capacitance protection diode. In this design, the occupation area of a Zener diode as a voltage limiting element is not required on the front surface of a semiconductor substrate. A P+ type embedded diffusion layer is formed in a P+ type semiconductor substrate, which is then covered by a non-doped first epitaxial layer. Following this, a high resistivity N type second epitaxial layer is formed on the first epitaxial layer. The second epitaxial layer is divided by a P+ isolation layer into two regions for forming protection diodes. An N+ type embedded layer extends from the front surface of the first epitaxial layer to both the first and second epitaxial layers. A Zener diode is created by a P+ type upward diffusion layer extending from the P+ type embedded diffusion layer and the N+ type embedded layer.
Another patent addresses the challenges faced by conventional semiconductor devices, such as lateral PNP transistors. Ooka's invention allows for achieving a desired current-amplification factor while maintaining breakdown voltage characteristics without increasing the device size. In this design, an N type epitaxial layer is formed on a P type single crystal silicon substrate, which serves as the base region. Molybdenum (Mo) is diffused in both the substrate and the epitaxial layer, allowing for the adjustment of the base current and achieving the desired current-amplification factor (hFE) of the lateral PNP transistor.
Career Highlights
Kentaro Ooka has worked with prominent companies in the semiconductor industry, including Sanyo Electric Co., Ltd. and On Semiconductor Trading, Ltd. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.
Collaborations
Throughout his career, Ooka has collaborated with notable colleagues such as Keiji Mita and Yasuhiro Tamada. These partnerships have likely enhanced his
Inventor’s Patent Attorneys refers to legal professionals with specialized expertise in representing inventors throughout the patent process. These attorneys assist inventors in navigating the complexities of patent law, including filing patent applications, conducting patent searches, and protecting intellectual property rights. They play a crucial role in helping inventors secure patents for their innovative creations.