The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2011
Filed:
Jul. 27, 2007
Keiji Mita, Gunma, JP;
Yasuhiro Tamada, Gunma, JP;
Kentaro Ooka, Gunma, JP;
Other;
Abstract
A conventional semiconductor device, for example, a lateral PNP transistor has a problem that it is difficult to obtain a desired current-amplification factor while maintaining a breakdown voltage characteristic without increasing the device size. In a semiconductor device, that is a lateral PNP transistor, according to the present invention, an N type epitaxial layer is formed on a P type single crystal silicon substrate. The epitaxial layer is used as a base region. Moreover, molybdenum (Mo) is diffused in the substrate and the epitaxial layer. With this structure, the base current is adjusted, and thereby a desired current-amplification factor (hFE) of the lateral PNP transistor is achieved.