The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2009
Filed:
Nov. 21, 2006
Applicants:
Keiji Mita, Gunma, JP;
Kentaro Ooka, Gunma, JP;
Inventors:
Keiji Mita, Gunma, JP;
Kentaro Ooka, Gunma, JP;
Assignee:
Sanyo Electric Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/732 (2006.01); H01L 21/8222 (2006.01); H01L 21/8228 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a semiconductor device of the present invention, an N type epitaxial layer is formed on a P type single crystal silicon substrate. In the substrate and the epitaxial layer, an N type buried diffusion layer is formed on a P type buried diffusion layer. With this structure, an upward expansion of the P type buried diffusion layer is checked and a thickness of the epitaxial layer can be made small while maintaining the breakdown voltage characteristics of a power semiconductor element. Accordingly, a device size of a control semiconductor element can be reduced.